Part number : F3NK80Z, STF3NK80Z
Functions : N-CHANNEL Power MOSFET ( N-channel 800V – 3.8Ω- 2.5A )
800V CoolMOS™ CE is Infineon's high performance device family offering 800V break down voltage. Designed according to the revolutionary superjunction (SJ) principle, it provides all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. 800V CoolMOS™ P7 A benchmark in efficiency and thermal performance With the 800V CoolMOS™ P7 series, Infineon sets a benchmark in 800V superjunction technologies and combines best-in-class performance with state-of-the-art ease-of-use. This new product family is a perfect fit for flyback based consumer SMPS applications. BUZ80 3.4A 800V N-Channel Power MOSFET is lot of variations for robust device performance and reliable operation High current, high speed.
Package information : TO-220FP Type
Manufacturer : STMicroelectronics
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Features
1. Extremely high dv/dt capability
2. 100% avalanche tested
3. Gate charge minimized
4. Very low intrinsic capacitances
5. Very good manufacturing repeatibility
Pinout
Product Information
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
F3NK80Z Datasheet PDF
This is a kind of transistor.
Part number : 11N80C3, SPP11N80C3
Functions : 800V, CoolMOS Power Transistor
Package information : TO-220-3 Pin Type
Manufactures : Infineon
800v Mosfet Application
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Description :
800V, CoolMOS Power Transistor
Mosfet 800v 50a
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
[ … ]
Absolute Maximum Ratings (Ta = 25°C)
1. Continuous drain current : Id = 11 A
2. Pulsed drain current : Id = 33 A
3. Avalanche energy, single pulse : Eas = 470 mJ
4. Avalanche energy, repetitive t AR : Ear = 0.2 mJ
5. Gate source voltage : Vgs = ± 20 V
Pinout
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Mosfet 800v 8a
11N80C3 Transistor File
800v Mosfet N-channel
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